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Exhaustive Gallium Nitride Strongly Arrives
2025-07-21
The third-generation semiconductor material GaN (Gallium Nitride) is an outstanding representative of wide bandgap semiconductors. The bandgap of GaN is three times that of Si, and its breakdown electric field is ten times that of Si. Therefore, power devices made from gallium nitride have significant features such as fast switching speed, low on-resistance, and small chip size, making them widely applicable in power adapters, industrial power supplies, and automotive electronics.
GaN power devices are generally divided into normally-on (depletion mode) and normally-off (enhancement mode) gallium nitride. Normally-on GaN power devices require negative voltage to turn off, and the market's understanding of their application characteristics was previously immature, making them difficult to use directly in practical applications. Currently, the market's depletion-mode GaN solutions mainly involve co-packaging these depletion-mode GaN power devices with low-voltage Si MOSFET devices. Well-known international semiconductor companies such as PI, TI, and Transphorm are promoting this solution. With deeper understanding, these GaN power devices can also be flexibly paired with low-voltage Si devices in consumer electronics applications. This not only fully utilizes GaN's high-frequency and high conversion efficiency characteristics but also ensures full compatibility with Si MOSFETs in driving, resulting in a relatively mature application ecosystem with multiple controller and driver options, offering flexibility in use and highly attractive system costs.
